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  ? 221 west industry court ? deer park, ny 11729-4681 ? phone (631) 586-7600 ? fax (631) 242-9798 ? ? world wide web - http://www.sensitron.com ? e-mail - sales@sensitron.com ? sensitron semiconductor technical data data sheet 4526, rev. b hermetic schottky rectifier very low forward voltage drop features: ? soft reverse recovery at low and high temperature ? low forward voltage drop ? low power loss, high efficiency ? high surge capacity ? guard ring for enhanced durability and long term reliability ? guaranteed reverse avalanche characteristics maximum ratings characteristics symbol condition max. units peak inverse voltage v rwm - 100 v max. average forward current i f(av) 50% duty cycle, rectangular wave form (single) 7.5 a max. average forward current i f(av) 50% duty cycle, rectangular wave form (common cathode) 15 a max. peak one cycle non- repetitive surge current i fsm 8.3 ms, half sine wave (per leg) 140 a non-repetitive avalanche energy e as t j = 25 c, i as = 3.0 a, l = 4.4 mh (per leg) 20 mj repetitive avalanche current i ar i as decay linearly to 0 in 1 s ? limited by t j max v a =1.5v r 3.0 a maximum thermal resistance r jc dc operation 1.7 c/w max. junction temperature t j - -65 to +200 c max. storage temperature t stg - -65 to +200 c electrical characteristics characteristics symbol condition max. units max. forward voltage drop v f1 @ 7.5a, pulse, t j = 25 c 0.84 v (per leg) v f2 @ 7.5a, pulse, t j = 125 c 0.68 v max. reverse current i r1 @v r = 100v, pulse, t j = 25 c 0.05 ma (per leg) i r2 @v r = 100v, pulse, t j = 125 c 0.5 ma max. junction capacitance (per leg) c t @v r = 5v, t c = 25 c f sig = 1mhz, v sig = 50mv (p-p) 250 pf shd115134 shd115134b
? 221 west industry court ? deer park, ny 11729-4681 ? phone (631) 586-7600 ? fax (631) 242-9798 ? ? world wide web - http://www.sensitron.com ? e-mail - sales@sensitron.com ? technical data data sheet 4526, rev. b mechanical dimensions: in inches / mm note: the v f curves shown are for the sd90scu100 unpackaged die only. shd115134 shd115134b shd-2b shd-2 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 forward voltage drop - v f (v) 10 -3 10 -2 10 -1 10 0 10 1 instantaneous forward current - i f (a) typical forward characteristics 125 c 200 c 175 c 25 c 0 20 40 60 80 100 120 reverse voltage - v r (v) 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 instantaneous reverse current - i r (ma) typical reverse characteristics 25 c 50 c 75 c 100 c 125 c 150 c 200c 175 c 0 20 40 60 80 100 120 reverse voltage - v r (v) 0 50 100 150 200 250 junction capacitance - c t (pf) typical junction capacitance .075 (1.91) max .315.010 (8.00.254) moly lid mol y base .315.010 (8.00.254) alumina ring .090 (2.29) max alumina ring moly base (cathode) .060.010 (1.52.254) .015.002 (.381.051) .020.005 r (.508.127 ) .315.010 (8.00.254) .150.010 (3.81.254) .465.020 (11.8.508) .315.010 (8.00.254) .015.005 (.381.127) copper anode
? 221 west industry court ? deer park, ny 11729-4681 ? phone (631) 586-7600 ? fax (631) 242-9798 ? ? world wide web - http://www.sensitron.com ? e-mail - sales@sensitron.com ? sensitron technical data data sheet 4526, rev. b shd115134 shd115134b disclaimer: 1- the information given herein, including the specifications and dimens ions, is subject to change without prior notice to impr ove product characteristics. before ordering, purchas ers are advised to contact the sensitron semiconductor sales department for the latest version of the datasheet(s). 2- in cases where extremely high reliabilit y is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment , and safety equipment) , safety s hould be ensured by using semi conductor devices that featur e assured safety or by m eans of users? fail-safe precautions or other arrangement . 3- in no event shall sensitron semiconductor be liable for any dam ages that may result from an accident or any other cause duri ng operation of the user?s units according to the datas heet(s). sensitron semiconductor assumes no responsibility for any intellectual property claims or any other problems that may result from applications of info rmation, products or circuits described in the datasheets. 4- in no event shall sensitron semiconductor be liable for any fa ilure in a semiconductor device or any secondary damage result ing from use at a value exceeding the absolute maximum rating. 5- no license is granted by the datasheet(s ) under any patents or other rights of any third party or sensitron semiconductor. 6- the datasheet(s) may not be reproduced or duplicated, in any form, in whole or par t, without the expressed written permissio n of sensitron semiconductor. 7- the products (technologies) de scribed in the datasheet(s) are not to be provi ded to any party whose purpose in their applica tion will hinder maintenance of international peace and safety nor are they to be ap plied to that purpose by their direct purchasers or any thir d party. when exporting these products (technolog ies), the necessary procedures are to be taken in accordance with related laws and regulatio ns.


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